Process-Oriented,High-Injection Circuit Models for Integrated Bipolar Junction Transistors. Part II. Volume II.

摘要

Contents: EQSOLVE (Equation Solver) Program, Sensitivity Curve Sets, PAREV (Parameter Evaluation) Code Listing, Transient Radiation Recovery Characteristics of Bipolar Junction Transistors, and Circuit Model for Neutron-Induced Performance Degradation in Bipolar Junction Transistors.