Insulating Films on GaAs

摘要

This project was an experimental investigation of the formation and the electrical characteristics of thin insulating layers on the compound semiconductor gallium arsenide, GaAs. The primary objective of the study was to obtain fundamental knowledge of the insulator-semiconductor interface for thin film structures formed by two different methods: (1) growth of oxide layers by plasma anodization, and (2) chemical vapor deposition of silicon nitride layers by a low temperature plasma-enhanced technique and a high temperature pyrolytic process. A secondary objective was to develop thin insulating films that may be suitable for surface passivation of GaAs devices. (Author)