Heteroepitaxy of Vacuum-Evaporated Ge Films on Single-Crystal Si

机译：真空蒸发Ge薄膜在单晶硅上的异质外延

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Tsaur, B. Y.; Fan, J. C.; Geis, M. W.; Gale, R. P.;
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年度 1980
页码 p.1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconducting films; Epitaxial growth; Single crystals; Germanium; Vacuum deposition; Evaporation; Substrates; Silicon; Crystal structure; Temperature; Reprints;

机译：半导体薄膜;外延生长;单晶;锗;真空沉积;蒸发;基板;硅;晶体结构;温度;重印;

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2. Heteroepitaxy of Ge (x) Si1-x (x similar to 0.4-0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction [J] . Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Physics of the solid state . 2010,第1期

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Heteroepitaxy of Vacuum-Evaporated Ge Films on Single-Crystal Si

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