Laser Assisted Semiconductor Device Processing

摘要

This report is divided into two separate sections, Part I and Part II. Part I covers the work on 'Laser Induced Surface Processing'. The objective of Part I of this program was to evaluate and characterize laser-induced processing of semiconductor materials and devices. The objective of Part II was to evaluate the laser blow-off ion implantation source. This new method involves a source of implant ions produced by laser 'blow-off' from a piece of dopant material. Energy from a short-pulse laser is focused onto the surface of the dopant material, forming a small bubble of dopant plasma which 'blows-off'. This plasma bubble is allowed to expand into vacuum until its density and area become suitable for electrostatic acceleration to the necessary ion implant energy.