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Fabrication of Microwave Devices Based on Magnetic Nanowires Using a Laser-Assisted Process

机译:使用激光辅助工艺制造基于磁性纳米线的微波设备

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摘要

This paper compares two laser-assisted processes developed by the authors for the fabrication of microwave devices based on nanowire arrays loaded inside porous alumina templates. Pros and cons of each process are discussed in terms of accuracy, reproducibility and ease of fabrication. A comparison with lithography technique is also provided. The efficiency of the laser-assisted process is demonstrated through the realization of substrate integrated waveguide (SIW) based devices. A Nanowired SIW line is firstly presented. It operates between 8.5 and 17 GHz, corresponding to the first and second cut-off frequency of the waveguide, respectively. Next, a Nanowired SIW isolator is demonstrated. It shows a nonreciprocal isolation of 12 dB (corresponding to 4.4 dB/cm), observed in absence of a DC magnetic field, and achieved through an adequate positioning of ferromagnetic nanowires inside the waveguide cavity.
机译:本文比较了作者开发的两种激光辅助工艺,这些工艺用于基于多孔氧化铝模板内部装载的纳米线阵列的微波器件的制造。从准确性,可重复性和易于制造的角度讨论了每个过程的利弊。还提供了与光刻技术的比较。通过基于衬底集成波导(SIW)的器件的实现,证明了激光辅助工艺的效率。首先介绍了纳米线SIW线。它的工作频率在8.5至17 GHz之间,分别对应于波导的第一和第二截止频率。接下来,说明纳米线SIW隔离器。它显示了在没有直流磁场的情况下观察到的12 dB(相当于4.4 dB / cm)的不可逆隔离,并且是通过在波导腔内适当放置铁磁纳米线实现的。

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