Rapid Thermal Processing of III-V Compound Semiconductors with Application to the Fabrication of Microwave Devices

摘要

This research was focused on establishing better techniques for surface doping of III-V semiconductors. The GaAs doping techniques investigated in this work include Si surface diffusions using a solid source, ion implantation following by rapid thermal annealing, and both solid source and vapor phase Zn diffusions. New models for Si diffusion/electrical activation, and Zn diffusion have been developed and implementated in computer simulations. Using these rapid thermal diffusion techniques, it was possible to demonstrate that shallow n+ and p+ layers can be produced reliably while retaining excellent surface morphology. In addition, an improved understanding of the annealing of defects and electrical activation of dopants in ion implanted, amorphized GaAs has been achieved. Keywords: Thermal processing; Semiconductors; Compound semiconductors; Surface doping; Microwave devices; Silicon diffusion; Zinc diffusion; Gallium arsenide. (jhd)