Nanodot and nanowire based MOSFET structures and fabrication processes

摘要

Novel nanodot and nanowire based MOSFET device structures and their fabrication processes are invented. These devices can be fabricated with the processes that do not need the extremely high lithographic resolution. The MOSFET devices remain functional even the nanodots and nanowires with varying sizes are randomly distributed. The activated number of nanodots and its total effective channel length/width are affected by the polished thickness of the insulation material in the CMP process. Therefore it is important to have a highly accurate control of CMP polishing rate to ensure a reliable process.