Band Gap of InAs(1-x)Sbx with Native Lattice Constant.

摘要

The band gap energy of the alloy InAsSb has been studied as a function of composition with special emphasis on minimization of strain-induced artifacts. The films were grown by molecular beam epitaxy on GaSb substrates with compositionally graded buffer layers that were designed to produce strain- free films. The compositions were precisely determined by high-resolution x-ray diffraction. Evidence for weak, long-range, group-V ordering was detected in materials exhibiting residual strain and relaxation. In contrast, unstrained films having the nondistorted cubic form showed no evidence of group-V ordering. The photoluminescence (PL) peak positions therefore corresponds to the inherent band gap of unstrained, unrelaxed, InAsSb. PL peaks were recorded for compositions up to 46% Sb, reaching a peak wavelength of 10.3 m, observed under low excitation at T = 13 K. The alloy band gap energies determined from PL maxima are described with a bowing parameter of 0.87 eV, which is significantly larger than measured for InAsSb in earlier work. The sufficiently large bowing parameter and the ability to grow the alloys without ordering allows direct band gap InAsSb to be a candidate material for low-temperature long-wavelength infrared detector applications.