Application of Ion Implantation Induced Damage to Electron Device Fabrication in InP

摘要

A detailed study of the insulating properties of ion-implantation induced damage in InP has been carried out for H, He, B, and Be implantation. For each ion, there was found to be an optimal implantation fluence for the formation of resistive layers. At this fluence, a maximum resistivity of 1000 to 10000 ohm cm was observed. Lower resistivities were observed for higher and lower implantation fluences. The primary anneal stage for the maximum resistivity layers was between 250 and 300 C. Anomalous results were observed for H implantation in that measurements carried out by contacting the front and back of the damage layer gave resistivity values two orders of magnitude greater than those measured by contacting to adjacent points on an isolated epitaxial structure. For all other ions, the results obtained for the two geometries were in good agreement. It has been shown that a conductive layer produced by the proton bombardment of the underlying Fe-doped substrate gives rise to a low resistance shunt in the epitaxial study.