Characterization of Silicon Grown by Cold Crucible Techniques.

摘要

Single crystal silicon grown by the cold crucible technique has been characterized by Fourier transform infrared (FTIR) spectroscopy, Hall effect, and etching. Boron, phosphorus, carbon, and oxygen were the only impurities observed. At 10K, FTIR data indicated oxygen concentrations in the low-to mid- ten to the 15th power per cu cm range and carbon concentations in the mid- ten to the 16th power to low ten to the 17th power per cu cm range. Asorption and Hall data are in close agreement on the born concentration (ten to the 15th power per cu cm) which seems to be significantly higher in the cold crucible crystals than in the opoy-crystalline silicon starting material. This indicates that boron is being added during the growth process. The oxygen concentration in the cold crucible material is significantly lower than in conventional Czochralski-grown material. The Hall mobility of the cold crucible samples is in the normal range (315-350 sq cm/volt-sec), the resistivity varied from about 12 to 22 ohm-cm and the defect density was high (1000). Further development of cold crucible growth technique is recommended.