Studies of the Electronic Properties of Two-Dimensionally Confined Carriers in MIS (Metal-Insulator-Semiconductor) Inversion/Accumulation Layers, Heterojunctions and Quantum Wells.

摘要

This report states the results of several investigations of the one and many electron transport, magneto-transport, optical and magneto-optical properties of quasi two-dimensionally confined charge carriers realized in metal-insulator-semiconductor (MIS) inversion or accumulation layers, heterojunctions, and multiple, isolated or coupled, quantum well structures involving III-V compound semiconductors and their alloys.