Electronic Properties of Grain Boundaries in GaAs: A Study of Oriented Bicrystals Prepared by Epitaxial Lateral Overgrowth

摘要

The electronic properties of grain boundaries in GaAs have been investigated. The optoelectronic properties of melt-grown polycrystalline GaAs were studied by cathodoluminescence. This analysis showed that grain boundary properties are influenced by both the boundary structure and the composition of the matrix. For a systematic investigation of the relationship between grain boundary structure and electronic behavior, a technique has been developed for the growth of oriented GaAs bicrystal layers by vapor-phase epitaxy using lateral overgrowth. Using this technique, a series of n-type bicrystal layers containing 110/(111) tilt boundaries with selected misorientation angles ranging from 0 to 30 degrees were grown.