Silicon Wafer Cleaning for Integrated Circuit Fabrication

摘要

A comparative study has been made of silicon wafers cleaned using different immersion methods in SPEL. The surfaces so produced have been assessed by various methods. The results obtained after using these cleans are reported and shown to be consistent with those described in the literature. The optimum clean has been found to be that described by RCA. This was adopted in SPEL as a standard procedure in August 1984 and results have been encouraging.