Comprehensive Approach to Melt Growth of III-V Compound Semiconductors with Special Consideration of InP, InSb and GaAs

摘要

The thrust of this research program was aimed at improving the chemical and crystalline perfection achievable with Liquid encapsulation (LEC) growth in compound semiconductors with special consideration of InP. To permit isolation and identification of systems specific (InP, InSb, GaAs, GaSb, etc.) and process specific (liquid encapsulation, high pressure) phenomena and effects, extensive use of model systems (ge, InSb) was made. The approach taken to the quantitative investigation of growth and segregation in InP was based on interference contrast analyses on differentially etched crystal specimens. On the basis of the present investigation it is concluded that the achievement of a high degree of chemical and crystalline perfection for LEC growth of compound semiconductors at elevated pressures is contingent on rigorous heat transfer (thermal gradient) control within the hot zone, melt stabilization, and effective solid solution hardening (with elements which will not adversely affect the electronic properties of the solid matrix.