High Speed Compound Semiconductor Devices in Layered Structures

摘要

Much progress has been made in the growth of GaAs on Si, GaAs MESFETs, MODFETs, HBTs, lasers on Si, modeling of MODFETs and MODFET ring oscillators, InGaAs/A1GaAs MODFETs, InGaAs hot electron transistors, GaAs/A1As resonant tunneling transistors, single and multi quantum wells. Accomplishments were reported in about 200 journal articles, 50 conference papers and 25 seminars over the past three years. Only the GaAs on Si, In sub yGa sub1-yAs/A1GaAs MODFET and InGaAs hot electron transistor related research accomplishments are summarized in this document. A list of publications covering all of the research funded by the AFOSR is provided as an appendix for those who are interested. (Author)