Effect of Atomic Layer Deposition on the Quality Factor of Silicon Nanobeam Cavities.

摘要

In this work we study the effect of thin-film deposition on the quality factor (Q) of silicon nanobeam cavities. We observe an average increase in the Q of 38 +/- 31% in one sample and investigate the dependence of this increase on the initial nanobeam hole sizes. We note that this process can be used to modify cavities that have larger than optimal hole sizes following fabrication. Additionally, the technique allows the tuning of the cavity mode wavelength and the incorporation of new materials, without significantly degrading Q.