Sub-100-nm Channel-Length Transistors Fabricated Using X-Ray Lithography

摘要

Enhancement mode n channel Silicon field effect transistors with channel lengths ranging from 60 nm to 5 micrometers have been fabricated using combined optical and x-ray lithographies, and were characterized from room temperature to 4.2 K. At room temperature, the 80 nm channel-length device showed quasi-long-channel behavior with high transconductance. At 4.2 K, a significant increase in transconductance was observed which may inidicate velocity overshoot.