Prevention of Current Leakage in Mass-Transported GaInAsP/InP Buried-Heterostructure Lasers with Narrow Transported Regions

摘要

The use of narrow transported regions as a simple technique to minimize current leakage has been analyzed. In the present model, current leakage occurs when the voltage buildup in the p-region is sufficiently large to turn on the InP homojunction in the transported region. The voltage buildup, the injected electron concentration, the drift and diffusion of the electrons, and the resulting homojunction current have been analyzed in detail. A simple formula has been derived which allows for device design for operation at high currents without a significant leakage. Keywords: Buried heterostructure lasers, Optical communications, Integrated optoelectronics.