Characterization of Mass-Transported p-Substrate GaInAsP/InP Buried-Heterostructure Lasers with Analytical Solutions for Electrical and Thermal Resistances

摘要

Studies have been carried out to evaluate mass-transported p-substrate GaInAsP/InP buried-heterostructure lasers which have a number of potential advantages over the more conventional n-substrate lasers. Devices have been fabricated with series resistances as low as 3 omega. In good agreement with the p-substrate spreading resistance calculated using conformal mapping. A further development of this theory yields simple formulas of thermal resistances of heat generated both in the active region and in the p-InP. The presently fabricated p-substrate lasers also showed CW threshold currents as low as 4.5 mA, differential quantum efficiencies as high as 34 percent per facet, output powers as high as 33 mW per facet, and a maximum total electrical-to-optical power conversation efficiency of 36 percent.