MBE (Molecular Beam Epitaxial) Growth Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices: Quarterly Report, June 15, 1987

摘要

As the MBE growth technique has continued to improve for Hg(1-x)Cd(x)Te films, the prospects for films of larger area have begun to be explored. These larger area films are important for imaging arrays and will be especially vital in the future for the efficient production of Hg(1-x)Cd(x)Te material. The growth of MBE of uniform Hg(1-x)Cd(x)Te epilayer on a large substrate is very difficult to achieve because of the non-uniform distribution of the fluxes and on the non-uniform temperature of the substrate.