MBE (Molecular Beam Epitaxial) Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices. Quarterly Report, March 15, 1987

摘要

Results obtained for MBE grown N & P-type layers in terms of carrier concentration and electron or hole mobilities. Most layers grown after the start date of the current contract. It is important to point out that even if these results are the best ever obtained in the laboratory they are representative of our level of control concerning the growth. Numerous layers with the same composition exhibit very similar results. A new Hg cell, which is a prototype built by ISA - Riber is currently being tested in the laboratory. This cell that we have conceived gives a very stable Hg flux during hours of growth. It should be noted that both mobility and carrier concentration values are suitable for IR device application. Keywords: Mercury compounds, Cadmium Tellurides.