CVD of SiC and AlN Thin Films Using Designed Organometallic Precursors

摘要

High purity, crystalline AlN and SiC thin films have been prepared by the chemical vapor deposition of (CH3)2AlN2)3 and (CH3)HSiCH2)3, respectively, at temperatures under 800 C. The use of these 'designed precursors' results in film stoichiometries of nearly one-to-one and the evolution of non-corrosive reaction by-products. In addition, no carrier gas is required. Preliminary studies of the interaction of the (CH3)HSiCH2)3 system with a clean Si(100) surface indicate interesting precursor adsorption and decomposition behavior with epitaxial growth of SiC on Si(100) at or below 700 C. It is anticipated that information from these studies will be used to improve the deposition processes and aid in the design of new precursors. Keywords: Thin films, Aluminum nitride, Silicon carbide, Design precursors, Silicon. (mjm)