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Laser CVD and plasma CVD of CrO.sub.2 films and cobalt doped CrO. sub.2 films using organometallic precursors

机译:CrO.2薄膜和钴掺杂CrO的激光CVD和等离子CVD。 sub.2使用有机金属前体的薄膜

摘要

Chromium dioxide is deposited as a ferromagnetic layer onto selected portions of a substrate or over the entire substrate. Chromium hexacarbonyl vapor is introduced into a vacuum deposition chamber at e.g. 10 milliTorr and oxygen is introduced at e.g. 15 to 100 milliTorr. A UV laser beam is focused onto the substrate to form the CrO.sub.2 layer photolytically. The CrO.sub.2 layer can also be deposited by RF plasma deposition. This technique can also be employed for depositing MoC.sub.2, WC.sub.2, Mo.sub.2 &phgr;.sub.3, MoO.sub.2 or WO.sub.2. Magnetic recording or memory devices are produced without the high failure rate typical of the prior art sputtering technique.
机译:二氧化铬作为铁磁层沉积在基板的选定部分上或整个基板上。将六羰基铬蒸气在例如50℃下引入真空沉积室。在例如10毫托下引入氧气。 15至100毫托。将紫外线激光束聚焦到基板上,以光解方式形成CrO.2层。 CrO 2层也可以通过RF等离子体沉积来沉积。该技术还可以用于沉积MoC.sub.2,WC.sub.2,Mo.sub.2 ph3,MoO.sub.2或WO.sub.2。磁记录或存储设备的生产没有现有溅射技术中典型的高故障率。

著录项

  • 公开/公告号US4980198A

    专利类型

  • 公开/公告日1990-12-25

    原文格式PDF

  • 申请/专利权人 SYRACUSE UNIVERSITY;

    申请/专利号US19890443738

  • 发明设计人 PETER A. DOWBEN;MARSHALL ONELLION;

    申请日1989-11-30

  • 分类号B05D3/06;B05D5/12;

  • 国家 US

  • 入库时间 2022-08-22 05:47:12

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