首页> 外国专利> Thin film formation method by laser ablation or high voltage discharge plasma CVD or laser ablation combined with high voltage discharge plasma CVD

Thin film formation method by laser ablation or high voltage discharge plasma CVD or laser ablation combined with high voltage discharge plasma CVD

机译:激光烧蚀或高压放电等离子体CVD或激光烧蚀结合高压放电等离子体CVD的薄膜形成方法

摘要

In the thin film forming method such as the laser ablation method, the plasma CVD method, or the combination method of the two methods according to the present invention, the laser beam 2 generated from the excimer or yag laser 1, which is a laser source, is used. Particles (laser plume 7) protruding from the surface when the fixed target 6 located in the vacuum chamber 5 are irradiated by condensing with the lens 3 and using an optical device called a driving reflector 4. A laser ablation method for forming a thin film on the substrate 9 located on the substrate heater 8, a plasma zone generated by applying a high voltage between the cathode 10 and the anode 11 made of a material to be sputtered ( Plasma CVD method for forming a thin film on the substrate 9 installed on the anode 11 located in the center of 12), the two methods are specially combined so that the above two deposition processes are performed at the same time. group (9) A method of forming a thin film such as a thin film device, wherein the plasma density is increased during the deposition process of the above three methods to increase the excitation efficiency and the deposition rate to form a thin film such as a thin film of good quality. In addition, the method may further include applying an electromagnetic field generated from the electromagnet 14 to the laser plume zone or plasma zone surrounded by the special high temperature heat-treated glass reactor 13.
机译:在根据本发明的诸如激光烧蚀法,等离子CVD法或这两种方法的组合方法的薄膜形成方法中,由作为激光源的受激准分子或YAG激光器1产生的激光束2。 , 用来。当位于真空室5中的固定靶6通过与透镜3会聚并使用称为驱动反射器4的光学装置照射从表面突出的颗粒(激光羽7)。一种激光烧蚀方法,用于在其上形成薄膜。在位于衬底加热器8上的衬底9上,通过在由要溅射的材料制成的阴极10和阳极11之间施加高电压而产生的等离子体区(等离子CVD方法,用于在安装在衬底9上的衬底9上形成薄膜)。阳极11位于12的中心),这两种方法专门结合使用,因此可以同时执行上述两个沉积过程。 (9)一种形成诸如薄膜器件之类的薄膜的方法,其中在上述三种方法的沉积过程中增加等离子体密度以增加激发效率和沉积速率以形成诸如薄膜器件之类的薄膜。薄膜质量好。另外,该方法还可包括将由电磁体14产生的电磁场施加到由特殊高温热处理玻璃反应器13围绕的激光羽流区或等离子体区。

著录项

  • 公开/公告号KR100324499B1

    专利类型

  • 公开/公告日2002-02-16

    原文格式PDF

  • 申请/专利权人 김종일;

    申请/专利号KR20000007405

  • 发明设计人 김종일;

    申请日2000-02-16

  • 分类号H01L21/20;

  • 国家 KR

  • 入库时间 2022-08-22 00:29:55

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