Current Controlled Liquid Phase Epitaxial Growth of InGaAsP

摘要

The current controlled liquid phase epitaxy (CCLPE) or electroepitaxy growth technique has been successfully employed for the first time to grow lattice matched In1-xGaxAsyP1-y quaternary layers of compositions corresponding to wavelengths of 1.31 micro meters and 1.52 micrometers. The layers were grown at a constant temperature of 647 C and 685 C. The growth rate of the layers grown at 685 C were 3 to 4 times higher than those grown at 647 C. Further, layers thicker than 3-4 micro meters could not be grown at a lower growth temperature of 647 C. These have been attributed to composition instabilities in the solid system at the growth temperature of 647 C. On increasing the growth temperature to 685 C, thicker layers as high as 20 micro meters of good crystal quality have been grown. Keywords: Crystallography, Etched crystals, Electroepitaxy, Semiconductor compounds, Selective etch-back, Doping, Selective growth, Indium, Allium, Phosphorous, Arsenides, Epitaxial growth, Semiconductor doping, (JES)