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机译:电流控制液相外延生长GaAs的取向依赖性外延生长
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;
A1. Electromigration; A3. Current-controlled liquid phase epitaxy; A3. Liquid phase epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide;
机译:电流控制液相外延生长GaAs的选择性外延生长
机译:液相外延法从富含锑的熔体中生长出高质量的AlGaSb,AlGaAsSb和InGaAsSb外延层
机译:高质量AIGaSb。通过液相外延从富Sb的熔体中生长的AIGaAsSb和InGaAsSb外延层
机译:目前控制液相外延的4H-SiC的生长
机译:通过分子束外延生长低无序GaAs / AlGaAs异质结构,以研究二维相关电子相。
机译:液相外延法生长光敏卟啉基MOF薄膜及其光电性能
机译:电流控制液相外延生长GaAs的取向依赖性外延生长