Energies and Symmetries in Interface Formation: In/GaP(110) and Ga/InP(110). (Reannouncement with New Availability Information).

摘要

We have used high-resolution synchrotron radiation photoemission to study adatom-substrate interactions and growth morphologies for In/GaP(110) and Ga/InP(110). Room-temperature experiments reveal extensive adatom clustering, but also substrate disruption and cation segregation for both interfaces, with greater amounts for Ga/InP(110). Ga deposition in InP(110) at 60K also results in substrate disruption, but with kinetic trapping of the released in atoms close to the interface and a greater tendency toward layer-by-layer growth. In contrast, the deposition of preformed metallic Ga clusters shows no evidence for substrate disruption. We conclude that atom condensation and coalescence are responsible for disruption, with different activation barriers being present for cluster deposition and atom deposition because of the details of surface and interface bonding. For Ga deposition on n-type InP(110) at 60K, the appearance of states at the Fermi level is correlated to changes in band bending. Metal cluster deposition leads to pinning positions that can be related to surface unrelaxation around the perimeter of the clusters; we find no evidence for metal induced gap states or defect levels.