Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove 110 Quantum Wires

机译：GaAs / AlGaAs和InGaAs / InP V形沟槽的价带能110量子线

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Comparison between the Burt-Foreman and Luttinger-Kohn valence-band Hamiltonians have been performed far realistic V-groove GaAs/AlGaAs and InGaAs/InP quantum wires. Significant differences in band structure is only found for InGaAs/InP quantum wires.

机译：Burt-Foreman和Luttinger-Kohn价带哈密顿量的比较已经进行了非常现实的V槽GaAs / AlGaAs和InGaAs / InP量子线。仅对于InGaAs / InP量子线发现能带结构上的显着差异。

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来源
《NSTI(Nano Science and Technology Institute) Nanotechnology Conference and Trade Show(Nanotech 2004)》|2004年|P.49-52|共4页
会议地点 Boston MA(US);Boston MA(US);Boston MA(US);Boston MA(US);Boston MA(US);Boston MA(US);Boston MA(US)
作者
B. Lassen; L. C. Lew Yan Voon; R. Melnik; M. Willatzen;
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作者单位

Mads Clausen Institute, University of Southern Denmark, Grundtvigs Alle 150, DK-6400 Sonderborg, Denmark;

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会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
quantum wires; V-groove; k ·p theory; valence band; band structure;

机译：量子线; V型槽; k·p理论;价带;能带结构;

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1. Observation of gain-coupled,pip distributed-feedback effects in V-groove InGaAs/AlGaAs quantum-wire arrays [J] . Kim TG, Tsuji Y, Ogura M Nanotechnology . 2006,第3期

机译：观察V型槽InGaAs / AlGaAs量子线阵列中的增益耦合点分布反馈效应
2. Observation of gain-coupled distributed-feedback effect in V-groove InGaAs/AlGaAs quantum-wire arrays [J] . T G KIM, Y TSUJI, M OGURA Nanotechnology . 2006,第3期

机译：V槽InGaAs / AlGaAs量子线阵列中增益耦合分布反馈效应的观察
3. High-density V-groove InGaAs/AlGaAs quantum wires on submicron gratings by constant growth technique [J] . Noriaki Tsurumachi, Chang-Sik Son, Tae Geun Kim Journal of Crystal Growth . 2002,第期

机译：通过恒定生长技术在亚微米光栅上的高密度V槽InGaAs / AlGaAs量子线
4. Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove 110 Quantum Wires [C] . B. Lassen, L. C. Lew Yan Voon, R. Melnik, NSTI nanotechnology conference and trade show . 2004

机译：GaAs / Algaas和InGaAs / InP V-Groove的价频率能量110量子线
5. Simulation and Comparison of High Speed GaAsSb-InP and InGaAs-InP Uni-Traveling-Carrier Photodiodes [D] . Guneroglu, Ugur 2019

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6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

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7. Spectral and Spatial Quantum Efficiency of AlGaAs/GaAs and InGaAs/InP PIN Photodiodes [O] . Steven Tabor 2000

机译：ALGAAS / GAAS和INGAAS / INP PIN光电二极管的光谱和空间量子效率

Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove 110 Quantum Wires

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