...
首页> 外文期刊>Nanotechnology >Observation of gain-coupled distributed-feedback effect in V-groove InGaAs/AlGaAs quantum-wire arrays
【24h】

Observation of gain-coupled distributed-feedback effect in V-groove InGaAs/AlGaAs quantum-wire arrays

机译:V槽InGaAs / AlGaAs量子线阵列中增益耦合分布反馈效应的观察

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

InGaAs/AlGaAs V-groove quantum-wire (QWR) arrays were fabricated by holographic lithography and one-time metalorganic chemical vapour deposition (MOCVD) to evaluate gain-coupled distributed-feedback (GC-DFB) effects in the InGaAs/AlGaAs materials. Using a finite-element method (FEM), mode analysis of the actual cross-sectional structure verified the modal gain of the QWR DFB structure, in which the gain was identified by a single peak at the Bragg wavelength of the grating. In addition, we observed a large gain anisotropy due to the gain/loss coupling in the DFB structure at a wavelength of 914 nm in the emission spectra from the 430 nm pitch QWR grating at room temperature.
机译:InGaAs / AlGaAs V槽量子线(QWR)阵列通过全息光刻和一次性金属有机化学气相沉积(MOCVD)制成,以评估InGaAs / AlGaAs材料中的增益耦合分布反馈(GC-DFB)效应。使用有限元方法(FEM),对实际横截面结构的模式分析验证了QWR DFB结构的模态增益,其中该增益由光栅的布拉格波长处的单个峰标识。此外,由于在室温下430 nm间距QWR光栅的发射光谱中,在914 nm波长处DFB结构中的增益/损耗耦合,我们观察到了较大的增益各向异性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号