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首页> 外文期刊>Nanotechnology >Nonlinear emission from an InGaAs/AlGaAs quantum-wire array
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Nonlinear emission from an InGaAs/AlGaAs quantum-wire array

机译:InGaAs / AlGaAs量子线阵列的非线性发射

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摘要

Gain-coupled distributed-feedback (GC-DFB) effects in a V-groove ln(0.2)Ga(0.8)As/Al0.2Ga0.8As quantum-wire (QWR) array are investigated by comparison with those in a GaAs/Al0.2Ga0.8As QWR array. Temperature-dependent photoluminescence (PL) spectra are measured for both samples, showing that the PL spectra from the QWRs are much stronger than those from the quantum wells (QWs) in the entire temperature region. Then, InGaAs/AlGaAs QWR GC-DFB lasers are fabricated by one-step metallorganic chemical vapour deposition (MOCVD) growth and characterized. As a result, strong nonlinearity in the emission spectra by optical feedback along the DFB directions is clearly observed near the threshold current, indicating that a V-groove InGaAs QWR array is a good candidate for a gain-coupled DFB laser.
机译:通过与GaAs / Al0中的比较研究了V型槽ln(0.2)Ga(0.8)As / Al0.2Ga0.8As量子线(QWR)阵列中的增益耦合分布反馈(GC-DFB)效应.2Ga0.8As QWR阵列。对两个样品均测量了与温度有关的光致发光(PL)光谱,表明在整个温度范围内,来自QWR的PL光谱要比来自量子阱(QW)的PL光谱强得多。然后,通过一步金属有机金属化学气相沉积(MOCVD)生长来制造InGaAs / AlGaAs QWR GC-DFB激光器并对其进行表征。结果,在阈值电流附近可以清楚地观察到沿DFB方向的光反馈所产生的发射光谱中的强非线性,这表明V槽InGaAs QWR阵列是增益耦合DFB激光器的良好候选者。

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