Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor

摘要

Dense silicon carbide films have been prepared by low pressure chemical vapor deposition (LPCVD) using a volatile, heterocyclic, carbosilane precursor. At deposition temperatures between 700 and 800 deg C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(111) substate. The results of preliminary studies of the nature of the gaseous by-products of the CVD processes and ultrahigh vacuum physisorption and decomposition of the precursor on Si(100) substrates are discussed. Keywords: Organic chemistry, Physical chemistry, Silica, Films, CVD, Silicon carbide, Organometallic precursor. (KT)