Pseudomorphic Bipolar Quantum Resonant-Tunneling Transistor.

摘要

A bipolar tunneling transistor has been fabricated in which ohmic contact is made to the strained p+ InGaAs quantum well of a double-barrier resonant-tunneling structure. The heterojunction transistor consists of an n- GaAs emitter and collector, undoped AlAs tunnel barriers, and a pseudomorphic p+ InGaAs quantum-well base. By making ohmic contact to the p-type quantum well, the hole density in the quantum-well base is used to modulate the base potential relative to the emitter and collector terminals. With control of the quantum- well potential, the tunneling current can be modulated by application of a base-to-emitter potential. This paper details the physical and electrical characteristics of the device. It is found that the base-emitter voltages required to bias the transistor into resonance are well predicted by a self- consistent calculation of the electrostatic potential.