首页> 美国政府科技报告 >Overshoot Saturation in Ultra-Submicron FETs Due to Minimum Acceleration Lengths.
【24h】

Overshoot Saturation in Ultra-Submicron FETs Due to Minimum Acceleration Lengths.

机译:由于最小加速长度,超亚微米FET中的过饱和。

获取原文

摘要

Ultra-submicron GaAs MESFETS have been fabricated with gate lengths ranging from 25 nm to 80 nm, using an electron-beam lithography process, in order to examine the operating characteristics as a function of gate length. Measurements of the transconductance, and the inferred transit velocity, as a function of the effective gate length show a minimum in these quantities near 55 nm. The rise in transconductance below this gate length is attributed to the onset of velocity overshoot in the channel region, and both the inferred transit velocity and the variations between the lightly doped samples and the heavily doped samples support this interpretation. For gate lengths below about 40 nm, however, the transconductance again drops. We attribute this drop to the existence of a minimum acceleration length needed for the carriers to reach the high values of the overshoot velocity. We have investigated this behavior with a transient transport model based upon a parameterized velocity autocorrelation function incorporating both energy and momentum relaxation rates. The results of this model yield qualitative agreement with both the measurements and the interpretation given above. Reprints. (rrh)

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号