New OMVPE (Organometallic Vapor Phase Epitaxial) Reactor for Large Area Uniform Deposition of InP and Related Alloys.

摘要

The deposition uniformity in a chimney reactor, with a sidearm to accommodate susceptor rotation and mechanized substrate loading, has been characterized by mapping the thickness of InP deposited on 50-mm-diam. GaAs substrates. Susceptor rotation improves the thickness uniformity by approximately a factor of seven, with the thickness uniformity reproducibly held to less than 3% across 40 mm, under typical growth conditions. The deposition pattern is independent of rotation rate from 3 to 120 rpm, which corroborates the existance of a slow-rotation regime (observed in an earlier flow visualization study) where susceptor rotation does not disturb the gas flow. In agreement with that interpretation, the observed deposition pattern with susceptor rotation is about the same as that predicted from a circular average of the results without rotation. Also, some discussion is given of growth parameters which influence the surface morphology of heteroepitaxial InP on GaAs. Keywords: Reprints. (kr)