Measurement of Deep Levels at InGaAs(P)/InP Heterojunctions.

摘要

We have studied the properties of semiconductor heterojunctions using several novel analytical and experimental techniques. A new, and highly accurate means for measuring the properties of heterojunctions has been demonstrated, where the measurements of the band offset energies can be made even in the presence of high densities of interface charge. The techniques developed have been applied to study both InGaAs/InP as well as HgCdTe/CdTe heterojunctions, affording the most accurate measurements obtained to date possible via the use of novel test structures consisting of organic-on-inorganic semi-conductor contact barrier diodes. Furthermore, we have grown InGaAs/InP heterojunctions with the lowest defect densities yet reported, and obtained the surprising result that the defect charge density is independent of the degree of lattice mismatch. Keywords: Heterojunctions, InGaAs(P), InP, Capacitance. (JES)