Fabrication, measurement and tuning of a photonic crystal H1-cavity in deeply etched InP/InGaAsP/InP

机译：光子晶体H1腔的制造，测量和调谐在深度蚀刻的INP / INGAASP / INP中的光子晶体H1腔

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A point defect cavity (H1) was fabricated by deep etching in the InP/InGaAsP/InP system. The optical properties of the devices were experimentally investigated by transmission spectroscopy yielding a Q-factor of ∼65. The resonance frequency of the defect cavity was shifted, by infiltrating the surrounding holes with both a polymer and liquid crystal. Furthermore, the transmission was enhanced by a factor ≪ 5 as a result of the filling.

机译：通过在INP / INGAASP / INP系统中深蚀刻来制造点缺陷腔（H1）。通过透射光谱进行实验研究了器件的光学性质，得到〜65的Q因子。通过用聚合物和液晶渗透周围孔来偏移缺陷腔的共振频率。此外，由于填充结果，通过因子«5增强了变速器。

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《International Conference on Indium Phosphide Related Materials》|2008年||共4页
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Kicken H.H.J.E.; Barbu I.; Gabriels J.; van der Heijden R.W.; Notzel R.; Karouta F.; Salemink H.W.M.; van der Drift E.;
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中图分类 TN248.4-53;
关键词
H1 cavity; InP; deeply etched; photonic crystal;

机译：H1腔;INP;深度蚀刻;光子晶体;

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专利

1. Wavelength-sized, tunable nanocavity in deeply etched InP/ InGaAsP/ InP photonic crystals [J] . H. H. J. E. KickenI. BarbuR. W. van der HeijdenF. KaroutaR. NötzelE. van der Drift and H. W. M. Salemink Optics Letters . 2009,第14期

机译：深度蚀刻的InP / InGaAsP / InP光子晶体中的波长大小可调纳米腔
2. Wavelength-sized, tunable nanocavity in deeply etched InP/InGaAsP/InP photonic crystals [J] . H. H. J. E. Kicken, I. Barbu, R. W. van der Heijden, Optics Letters . 2009,第14期

机译：深度蚀刻的InP / InGaAsP / InP光子晶体中的波长大小可调纳米腔
3. Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals [J] . H. H. J. E. Kicken, I. Barbu, R. W. van der Heijden, Journal of Applied Physics . 2009,第8期

机译：高纵横InP / InGaAsP / InP光子晶体中的波长大小的腔
4. Fabrication, measurement and tuning of a photonic crystal H1-cavity in deeply etched InP/InGaAsP/InP [C] . Kicken H.H.J.E., Barbu I., Gabriels J., International Conference on Indium Phosphide Related Materials . 2008

机译：光子晶体H1腔的制造，测量和调谐在深度蚀刻的INP / INGAASP / INP中的光子晶体H1腔
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition [O] . Ludovico Megalini, Simone Tommaso Šuran Brunelli, William O. Charles, 2018

机译：应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的（001）图案化Si衬底上生长的InP的缺陷
7. Wavelength-sized, tunable nanocavity in deeply etched InP/InGaAsP/InP photonic crystals [O] . Kicken, HHJE Harm, Barbu, I Ionut, Heijden, van der, RW Rob, 2009

机译：深度蚀刻的InP / InGaAsP / InP光子晶体中的波长大小可调纳米腔
8. Calculation of the Capacitance-Voltage Characteristics of p+-InP/n-InP/n-InGaAsP Photodiodes [R] . Donnelly, J. P. 1981

机译：p + -Inp / n-Inp / n-InGaasp光电二极管的电容 - 电压特性计算

Fabrication, measurement and tuning of a photonic crystal H1-cavity in deeply etched InP/InGaAsP/InP

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