Analytic Theory of the Auger Transistor: A Hot Electron Bipolar Transistor

摘要

The operation of an Auger transistor has been investigated using a coupledanalysis based on thermionic-emission and drift-diffusion theory. Characteristics are derived for steady-state and small-signal operation for single electron-hole pair generation by each injected hot electron. We have also included the effect o f parasitics in this simple theory, to project, for some of the plausibel material systems, the figures of merit for high-frequency applications. The analysis suggests that Auger transistors, employing very small bandgap semiconductors in the heavily doped base and operating at low temperatures, will exhibit appealing performance as devices are scaled in size and operating voltage. (Author)