Channel Hot-Carrier Stressing of Reoxidized Nitrided Silicon Dioxide

摘要

The mechanisms of channel hot-carrier-induced degradation in short n-channelMOSFET's with reoxidized nitrided oxide as the gate dielectric were studied. Charge pumping measurements demonstrate that virtually no interface trap generation occurs in these devices. A three orders of magnitude improvement in device lifetime (versus conventional oxide) is demonstrated. Keywords: Channel hot-carrier-induced degradation, Electronics, Transistors, Gate dielectric, Silicone dioxide. (jr)