The mechanisms of channel hot-carrier-induced degradation in short n-channel MOSFETs with reoxidized nitrided oxide as the gate dielectric are discussed. Charge pumping measurements, supported by observations on the gate voltage dependence of degradation and the power law dependence of Delta g/sub m/ on stress time, demonstrate that virtually no interface trap generation occurs in reoxidized nitrided oxides and that electron trapping is the dominant degradation mechanism. Although electron trapping can be enhanced in these dielectrics, this mechanism is not as important for device degradation as interface trap generation, and the net effect is substantially improved resistance to hot-carrier stress. A three-orders-of-magnitude improvement in device lifetime (versus conventional oxide) is demonstrated.
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机译：讨论了在以再氧化的氮氧化物作为栅极电介质的短n沟道MOSFET中沟道热载流子引起的退化的机理。电荷泵浦测量得到了对栅极电压的退化依赖性和Δg/ sub m /的幂律对应力时间的依赖性的观察结果，证明了在再氧化的氮化氧化物中几乎没有界面陷阱的产生，并且电子陷阱是主要的退化机制。尽管可以在这些电介质中增强电子俘获，但这种机制对器件退化的影响不如界面陷阱产生重要，其净效应是实质上提高了对热载流子应力的抵抗力。器件寿命（相对于传统氧化物）提高了三个数量级。
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