Photoresponse Studies of Ion-Damaged Germanium for Optoelectronic Switch Applications.

摘要

In light of the potential of germanium optoelectronic (OE) switches for OE/time division multiplexing (OE/TDM) applications, preliminary research into the effect of crystalline damage on its photoresponse was performed. This document reports the results of this proposed method to decrease the photocurrent decay time for high-speed OE switches.