InAs1-xSbx Alloys with Native Llattice Parameters Grown on Compositionally Graded Buffers: Structural and Optical Properties.

摘要

GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs1-xSbx epitaxial alloys with strain-free native lattice constants up to 2.1% larger than that of GaSb. The in-plane lattice constant of the strained to buffer layer was grown to be equal to the native, unstrained lattice constant of InAs1-xSbx with given x. The InAs0.56As0.44 layers demonstrated a photoluminescence (PL) peak at 9.4 um at T=150K. The minority carrier lifetime measured at 77K for InAs0.8Sb0.2 was 250 ns.