Monolithic Dual-Gate MESFET Circuit for L-Band Mixers

摘要

An L-band GaAs dual-gate MESFET monolithic mixer has been developed to convert a1.575 GHz signal to an intermediate frequency of 173 MHz with a local oscillator frequency of 1.402 GHz. In order to reduce chip size, active baluns and buffer amplifiers have been combined with two dual-gate MESFET mixers to form a single integrated balanced mixer circuit. The active baluns eliminate the need for large passive baluns, and the buffer amplifiers replace the IF matching networks; thus, easing integration at L-band frequencies. Circuit size is 1.15 X 1.8 mm. The circuit was commercially fabricated; however, this thesis describes only the design, simulation, and layout of the mixer circuit. (JHD)