Monolithic GaAs MESFET active device balun circuit

摘要

The present invention relates to an MMIC active balun circuit, and more particularly to a MMIC active balun circuit comprising a source common MESFET consisting of one GaAs MESFET, a bias resistor at the source and drain stages, one GaAs MESFET each in parallel with the two resistors, And the voltage variable resistance circuit (R1, R2) is added to the source or drain of the MESFET (111) in addition to the source common baluns (111, 121, 122) The monolithic GaAs MESFET active element balun circuit, which is a monolithic type GaAs MESFET, is a circuit that balances the output balance in the active balun of the monolithic circuit when the output power is unbalanced. There is an effect that the calculation rate can be increased.