Deposition of InP-ON-Si Substrates for Monolithic Integration of AdvancedElectronics

摘要

This report describes the development of a technology for the deposition of InPand lattice-matched InGaAs onto Si and GaAs substrates. Such structures are useful for the monolithic integration of high speed optical and electronic devices. The growth technique employed in this program in metalorganic chemical vapor deposition (MOCVD), and GaAs buffer layers are employed to improve the quality of the InP epilayers. Other deflect-reduction techniques studied include the use of strained layers and thermal annealing. Characterization methods include transmission electron microscopy, photoluminescence (PL),PL decay, Hall effect, electrochemical C-V profiling, and deep-level transient spectroscopy. Junction field-effect transistors and PIN photodiodes have been fabricated and characterized on Si, GaAs, and InP substrates, and their performance characteristics compared.