Spike Leakage and Burnout of Silicon PIN Diode Microwave Limiters

摘要

Microwave limiters are used to protect sensitive electronics from damage due toexposure to high levels of rf radiation. The two major limitations to the operation of PIN diode limiters are spike leakage, power transmitted before limiting action begins, and damage to the limiter itself due to high power. A combined theoretical and experimental study of spike leakage and burnout has been made for silicon PIN diodes. The diodes ranged in intrinsic-level thickness from 0.5 to 50 micrometers. Thin diodes, emphasized in this study, have little spike leakage but are damaged at relatively low power. Thick diodes withstand very high powers but have large spike leakage. Although qualitative agreement between the calculations and measurements is excellent, there are important areas of quantitative disagreement. Reasons for the disagreement are suggested. The computer program DIODE, used for the calculations, is described, as are the methods used in the experimental measurements. Useful comparisons have also been made of dc transients and of the forward-biased rf conductivity of the PIN diodes. Suggestions for further work are made. (Author)