Electro-Thermal Transient Simulation of Silicon Carbide Power Mosfet

摘要

This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm2. The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model was created and simulated using Silvaco ATLAS Technology Computer-Aided Design (TCAD) physics based simulation software. Physics based models were used to accurately model electrical device parameters including carrier mobility, recombination effects, bandgap narrowing, impact ionization and lattice heating.