P+ Contacts on GaAs for Semiconductor Lasers.

摘要

The report discusses the physics and engineering of semiconductor electrical contacts and the importance of low resistance Ohmic contacts for the best performance from electronic devices. A simple method is used to deduce the resistance of the electrical contacts and the bulk semiconductor. The fabrication process for P+ GaAs contacts is discussed. Test results are presented for the resistance of the metal electrodes, P+ GaAs bulk, the intrinsic contact resistance and the temperature dependence of the metal and P+ GaAs. The distributed impedance of the contact structure for semiconductor lasers is discussed.... Electrical contacts, GaAs, Distributed impedance, Lasers.