Charge Dynamics at the Si(001) Surface Studied by Scanning Tunneling Microscopyand Surface Photovoltage

摘要

Scanning Tunneling microscopy measurements of local surface photo-voltage of theSi(001) surface reveal the existence of local charging produced by the tunneling current. Since the tunneling current is confined to a region of near atomic dimensions, charge transport between surface and bulk electronic states is probed with high spatial resolution. The surface charge is enhanced while tunneling at the bonded, type-B atomic step and at specific point defects demonstrating atomic-scale variations in the charge dynamics.