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Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy

机译:通过扫描隧道显微镜研究邻近Si(001)表面上的逐步相互作用

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摘要

We report on measurements of step-step interaction on a flat Si(111)-(7×7) surface and on vicinal Si(001) surfaces with miscut angles ranging between 0.2° and 8°. Starting from scanning tunneling microscopy images of these surfaces and describing steps profile and interactions by the continuum step model, we measured the self-correlation function of single steps and the distribution of terrace widths. Empirical parameters, such as step stiffness and step-step interaction strength, Were evaluated from the images. The present experiment allows to assess the dependence of the step-step repulsion on miscut angle, showing how parameters drawn from tunneling images can be used to interpolate between continuum mesoscopic models and atomistic calculations of vicinal surfaces.
机译:我们报告了在平面Si(111)-(7×7)表面和邻近Si(001)表面上错切角度介于0.2°和8°之间的阶跃相互作用的测量结果。从扫描这些表面的隧道显微镜图像开始,并通过连续步骤模型描述步骤轮廓和相互作用,我们测量了单个步骤的自相关函数和平台宽度的分布。从图像评估经验参数,例如步幅刚度和步幅交互作用强度。本实验允许评估阶梯排斥力对错切角的依赖性,显示出从隧穿图像中提取的参数如何可用于在连续介观模型和邻近表面的原子计算之间进行内插。

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  • 来源
    《Physical review 》 |2009年第7期| 075315.1-075315.6| 共6页
  • 作者单位

    Dipartimento di Fisica, Universita di Roma 'Tor Vergata.' Via delta Ricerca Scientifiva, 1-00133 Roma, Italy;

    Dipartimento di Fisica, Universita di Roma 'Tor Vergata.' Via delta Ricerca Scientifiva, 1-00133 Roma, Italy;

    Dipartimento di Fisica, Universita di Roma 'Tor Vergata.' Via delta Ricerca Scientifiva, 1-00133 Roma, Italy;

    Dipartimento di Fisica, Universita di Roma 'Tor Vergata.' Via delta Ricerca Scientifiva, 1-00133 Roma, Italy;

    Dipartimento di Fisica, Universita di Roma 'Tor Vergata.' Via delta Ricerca Scientifiva, 1-00133 Roma, Italy;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    elemental semiconductors; scanning tunneling microscopy (including chemistry induced with STM);

    机译:元素半导体扫描隧道显微镜(包括用STM诱导的化学反应);

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