MOCVD Growth of GAN, AlN and AlGaN for UV Photodetector Applications.

摘要

For the growth of III-V nitrides, three main problems hinder the production of device quality materials. They are large lattice mismatch between nitride films and substrates, high n-type background concentration and difficulty in p-type doping. In the past year, we focused on the first problem, the lattice mismatch. Different substrates and different orientations of the substrates have been used in order to find a suitable substrate for the nitride growth. An atmospheric horizontal-type metalorganic chemical vapor deposition (MOCVD) reactor was used for the growth of aluminum nitride gallium nitride and ternary AlGa(1-x)N.